Feram cell with internal oxygen source and method of oxygen release
AssigneeInternational Business Machines Corporation
InventorsCharles Thomas Black, Cyril Cabral, Jr., Alfred Grill, Deborah Ann Neumayer, Wilbur David Pricer, Katherine Lynn Saenger, Thomas McCarroll Shaw
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Abstract
An integrated ferroelectric/CMOS structure which comprises at least a ferroelectric material, a pair of electrodes in contact with opposite surfaces of the ferroelectric material, where the electrodes do not decompose at deposition or annealing, and an oxygen source layer in contact with at least one of said electrodes, said oxygen source layer being a metal oxide which at least partially decomposes during deposition and/or subsequent processing is provided as well as a method of fabricating the same.
Claims30
A ferroelectric capacitor comprising a conductive electrode layer;
- a ferroelectric layer disposed on said conductive electrode layer;
- a conductive counterelectrode layer formed on said ferroelectric layer and an at least partially decomposed oxygen source layer in proximity to one of said electrode layers.
An integrated ferroelectric/CMOS structure comprising:
- a CMOS structure having at least one transistor;
- a ferroelectric capacitor formed on said CMOS structure, said ferroelectric capacitor comprising a conductive electrode layer, a ferroelectric layer disposed on said conductive electrode layer, a conductive counterelectrode layer formed on said ferroelectric layer and an at least partially decomposed oxygen source layer in proximity to one of said electrode layers;
- and
- at least one wiring level formed on said ferroelectric capacitor.
Dependencies are inferred from the claim text.