Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof

A semiconductor pressure sensor comprising:

• a diaphragm which deflects in response to pressure acting on a main surface thereof;
• a pressure reference chamber provided on a side of a rear surface of the diaphragm, an inside of the pressure reference chamber being in a state of reduced pressure;
• and
• a detecting device for detecting the pressure acting on the main surface of the diaphragm based on an amount of deflection of the diaphragm,
• wherein, a thickness of the diaphragm is set so that a maximum value of deflection of the diaphragm which is derived from a thickness, a radius, an elastic modulus determined from a material of the diaphragm and a pressure uniformly acting on the main surface of the diaphragm is equal to or lower than the thickness of the diaphragm, and the maximum value W (mm) of deflection of the diaphragm is expressed by the following equation,
• W=0.171×(P×R4)/(E×H3)
• in which P (kfg/mm2) is a pressure acting on the diaphragm which is determined by a difference between a pressure Po (kgf/mm2) acting on the main surface thereof and a pressure Ps (kgf/mm2) acting on the rear surface thereof, R (mm) is a radius of the diaphragm having a circle shape, E (kfg/mm2) is an elastic modulus determined by the material and H is a thickness dimension of the diaphragm.

A semiconductor pressure sensor comprising:

• a diaphragm which deflects in response to pressure acting on a main surface thereof;
• a pressure reference chamber provided on a side of a rear surface of the diaphragm, an inside of the pressure reference chamber being in a state of reduced pressure;
• and
• a detecting device for detecting the pressure acting on the main surface of the diaphragm based on an amount of deflection of the diaphragm,
• wherein, a thickness of the diaphragm is set so that a maximum value of deflection of the diaphragm which is derived from a thickness, a side length, an elastic modulus determined from a material of the diaphragm and a pressure uniformly acting on the main surface of the diaphragm is equal to or lower than the thickness of the diaphragm, and the pressure reference chamber has a channel that extends in parallel with the main surface of the diaphragm, the channel enabling the pressure reference chamber to be sealed at the reduced pressure.

A semiconductor pressure sensor comprising:

• a diaphragm which deflects in response to pressure acting on a main surface thereof;
• a pressure reference chamber provided on a side of a rear surface of the diaphragm, an inside of the pressure reference chamber being in a state of reduced pressure;
• and
• a detecting device for detecting the pressure acting on the main surface of the diaphragm based on an amount of deflection of the diaphragm,
• wherein, a thickness of the diaphragm is set so that a maximum value of deflection of the diaphragm which is derived from a thickness, a side length, an elastic modulus determined from a material of the diaphragm and a pressure uniformly acting on the main surface of the diaphragm is equal to or lower than the thickness of the diaphragm, and the pressure reference chamber has a channel that extends in parallel with the main surface of the diaphragm, the channel being for determining the thickness of the diaphragm in a state where the pressure reference chamber has an atmospheric pressure.

A semiconductor pressure sensor comprising:

• a diaphragm which deflects in response to pressure acting on a main surface thereof;
• a pressure reference chamber provided on a side of a rear surface of the diaphragm, an inside of the pressure reference chamber being in a state of reduced pressure;
• and
• a detecting device for detecting the pressure acting on the main surface of the diaphragm based on an amount of deflection of the diaphragm,
• wherein, a thickness of the diaphragm is set so that a maximum value of deflection of the diaphragm which is derived from a thickness, a radius, an elastic modulus determined from a material of the diaphragm and a pressure uniformly acting on the main surface of the diaphragm is equal to or lower than the thickness of the diaphragm, and the pressure reference chamber has a channel that extends in parallel with the main surface of the diaphragm, the channel enabling the pressure reference chamber to be sealed at the reduced pressure.

A semiconductor pressure sensor comprising:

• a diaphragm which deflects in response to pressure acting on a main surface thereof;
• a pressure reference chamber provided on a side of a rear surface of the diaphragm, an inside of the pressure reference chamber being in a state of reduced pressure;
• and
• a detecting device for detecting the pressure acting on the main surface of the diaphragm based on an amount of deflection of the diaphragm,
• wherein, a thickness of the diaphragm is set so that a maximum value of deflection of the diaphragm which is derived from a thickness, a radius, an elastic modulus determined from a material of the diaphragm and a pressure uniformly acting on the main surface of the diaphragm is equal to or lower than the thickness of the diaphragm, and the pressure reference chamber has a channel that extends in parallel with the main surface of the diaphragm, the channel being for determining the thickness of the diaphragm in a state where the pressure reference chamber has an atmospheric pressure.