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US 6,388,272 B1Granted
W/WC/TAC ohmic and rectifying contacts on SiC
AssigneeCaldus Semiconductor, Inc.
InventorBruce Odekirk
Life of this patent
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Abstract
Ohmic and rectifying contacts to a TaC layer on an n-type or p-type area of an SiC substrate are formed by depositing a WC layer over the TaC layer, followed by a metallic W layer. Such contacts are stable to at least 1150° C. Electrodes connect to the contacts either directly or via a protective bonding layer such as Pt or PtAu alloy through a dielectric layer.
Claims22
A SiC semiconductor device comprising:
- a semiconductor substrate comprising silicon carbide having a first surface and a second surface, the substrate including a first doped region adjacent the first surface and a second doped region adjacent the second surface;
- a first conductive layer comprising a first contact metal layer on the first surface to form a first contact having an electronic interface to the first region;
- and
- a second conductive layer contacting the second surface to form a second electronic contact to the substrate, the second layer including:
- a tantalum carbide (TaC) layer contacting the second surface;
- a tungsten carbide (WC) layer covering the tantalum carbide (TaC) layer;
- and
- a layer consisting essentially of elemental tungsten contacting the tungsten carbide (WC) layer.
5 more elements
Dependencies are inferred from the claim text.