US 6,388,271 B1Granted

Semiconductor component

AssigneeSiemens Aktiengesellschaft

InventorsHeinz Mitlehner, Michael Stoisiek

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Abstract

The power semiconductor components in prior art high-voltage smart power ICs frequently take up more than half of the total chip surface. To be able to produce the ICs more economically, the material consumption must be reduced, and hence, in particular, the surfaces of the drift zones of the power semiconductor components must be made significantly smaller. Based on the premise that the electrical breakdown field strength of silicon carbide is approximately ten times higher than that of silicon, the parts of a semiconductor component which receive voltage are integrated in silicon carbide. The drift zone can be made much smaller for the same reverse voltage. In an SiC MOS transistor with lateral current conduction, the SiC layer, which is only approximately 1-2 μm thick and is covered by an SiO2 layer, is arranged so as to be dielectrically insulated on an Si substrate. Two n+-doped SiC regions are used as source and drain contacts. The electron-conducting channel is formed on that surface of a p+-doped region of the SiC layer which is opposite the gate electrode. The SiC drift zone, which is only weakly electron-conducting, adjoins the channel in the lateral direction.

Claims4

Dependent claims

Semiconductor component, comprising:

a substrate formed of a first semiconductor material having a given electrical breakdown field strength and carrying a first insulator layer having a surface;
a second layer covering at least a part of said surface of said first insulator layer, said second layer being formed of a second semiconductor material having an electrical breakdown field strength higher than the given electrical breakdown field strength of said first semiconductor material;
said second layer having a first region in contact with a first electrode and doped to be electrically conductive, and a second region in contact with a second electrode and doped to be electrically conductive, said second layer extending in a first lateral direction so as to form a drift zone between said first region and said second region, said first region having a multiplicity of subregions of a corresponding conductivity type, said subregions being spaced apart from one another in a second lateral direction orthogonal to the first lateral direction;
a second insulator layer covering said drift zone;
a control element having a first connection and a second connection, said control element conductively connected to one of said first and second electrodes and arranged in a portion of said substrate not covered by said second layer;
and
contact regions of an opposite conductivity than said subregions insulating adjacent said subregions from one another, each of said subregions conductively connected to said first connection of said control element, and each of said contact regions conductively connected to said second connection of said control element.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/523,232Filed 10 Mar 2000 · continuation
Priority: DE 197 39 81310 Sep 1997
Granted: 14 May 2002
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 62/8325
Being Group IV materials comprising two or more elements, e.g. SiGe: silicon carbide
H10D 12/411
Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]: insulated-gate bipolar transistors [IGBT]
H10D 18/251
Thyristors: lateral thyristors
H10D 30/6717
Characterised by the doping profiles, e.g. having lightly-doped source or drain extensions: the source and the drain regions being asymmetrical