Method and cleaner composition for stripping copper containing residue layers
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorKwok Keung Paul Ho
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Abstract
A cleaner composition for removing from within a microelectronic fabrication a copper containing residue layer in the presence of a copper containing conductor layer, and a method for stripping from within a microelectronic fabrication the copper containing residue layer in the presence of the copper containing conductor layer. The cleaner composition comprises: (1) a hydroxyl amine material; (2) an ammonium fluoride material; and (3) a benzotriazole (BTA) material. The cleaner composition contemplates the method for stripping from within the microelectronic fabrication the copper containing residue layer in the presence of the copper containing conductor layer.
Claims24
A cleaner composition for stripping a copper containing residue layer on a microelectronic structure comprising:
- a hydroxyl amine material;
- an ammonium fluoride material;
- and
- a benzotriazole material;
- the benzotriazole material selected from the group consisting of C2/BTA, C3/BTA, C4/BTA, C5/BTA, T-C5/BTA, Tol/BTA and Glu/BTA.
A cleaner composition for stripping a copper containing residue layer on a microelectronic structure comprising:
- a hydroxyl amine material at a concentration of from about 1E-4 to 80weight percent;
- an ammonium fluoride material at a concentration of from about 1E-4 to 80weight percent;
- and
- a benzotriazole material at a concentration of from about 1E-4 to 50 weight percent;
- the benzotriazole material selected from the group consisting of C2/BTA, C3/BTA, C4/BTA, T-C5/BTA, Tol/BTA and Glu/BTA.
Dependencies are inferred from the claim text.