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US 6,387,851 B1Granted
Micro-fabrication method and equipment thereby
AssigneeHitachi, Ltd.
InventorTakao Matsumoto
Life of this patent
Estimating the term…
Abstract
An SrTiO3 monocrystal substrate having a crystallographic plane (100) or (110) is anisotropically etched in an H3PO4 solution using an SiO2 thin film as an etching mask. The H3PO4 solution is maintained at a boiling point of approximately 150 deg. C. for increasing an etching rate and enhancing selectivity for protection with the SiO2 thin film mask.
Claims10
A microfabrication method, comprising the steps of:
- (a) providing an SrTiO3 monocrystal substrate having a (100) plane on a surface thereof;
- (b) forming an SiO2 film on said (100) plane of said SrTiO3 monocrystal substrate;
- (c) removing a part of said SiO2 film according to a predetermined pattern;
- (d) providing an H3PO4 solution maintained at a predetermined temperature;
- (e) immersing said SrTiO3 monocrystal substrate resulting from step (c) in said H3PO4 solution for a predetermined period of time;
- and
- (f) taking said SrTiO3 monocrystal substrate out of said H3PO4 solution.
4 more elements
A microfabrication method, comprising the steps of:
- (a) providing an SrTiO3 monocrystal substrate having (100) planes on mutually opposed surfaces thereof;
- (b) epitaxially growing a YBa2Cu3O7−δ high-temperature superconductor thin film on one of said (100) planes of said SrTiO3 monocrystal substrate;
- (c) forming an SiO2 film on said YBa2Cu3O7−δ high-temperature superconductor thin film;
- (d) forming an SiO2 film on the other one of said (100) planes of said SrTiO3 monocrystal substrate;
- (e) removing a part of said SiO2 film from said other one of said (100) planes of said SrTiO3 monocrystal substrate according to a predetermined pattern;
- (f) forming a protective material on said SiO2 film on said YBa2Cu3O7−δ high-temperature superconductor thin film;
- (g) providing an H3PO4 solution maintained at a predetermined temperature;
- (h) immersing said SrTiO3 monocrystal substrate resulting from step (f) in said H3PO4 solution for a period of time required for etching said SrTiO3 monocrystal substrate according to the predetermined pattern corresponding to the removed part of said SiO2 film;
- and
- (i) taking said SrTiO3 monocrystal substrate out of said H3PO4 solution.
7 more elements
A microfabrication method, comprising the steps of:
- (a) providing an SrTiO3 monocrystal substrate having at least one (110) plane on a surface thereof;
- (b) forming an SiO2 film on said (110) plane of said SrTiO3 monocrystal substrate;
- (c) removing a part of said SiO2 film according to a predetermined pattern;
- (d) providing an H3PO4 solution maintained at a predetermined temperature;
- (e) immersing said SrTiO3 monocrystal substrate resulting from step (c) in said H3PO4 solution for a predetermined period of time;
- and
- (f) taking said SrTiO3 monocrystal substrate out of said H3PO4 solution.
4 more elements
A microfabrication method, comprising the steps of:
- (a) providing an SrTiO3 monocrystal substrate having (110) planes on mutually opposed surfaces thereof;
- (b) epitaxially growing a YBa2Cu3O7−δ high-temperature superconductor thin film on one of said (110) planes of said SrTiO3 monocrystal substrate;
- (c) forming an SiO2 film on said YBa2Cu3O7−δ high-temperature superconductor thin film;
- (d) forming an SiO2 film on the other one of said (110) planes of said SrTiO3 monocrystal substrate;
- (e) removing a part of said SiO2 film from said other one of said (110) planes of said SrTiO3 monocrystal substrate according to a predetermined pattern;
- (f) forming a protective material on said SiO2 film on said YBa2Cu3O7−δ high-temperature superconductor thin film;
- (g) providing an H3PO4 solution maintained at a predetermined temperature;
- (h) immersing said SrTiO3 monocrystal substrate resulting from step (f) in said H3PO4 solution for a period of time required for etching said SrTiO3 monocrystal substrate according to the predetermined pattern corresponding to the removed part of said SiO2 film;
- and
- (i) taking said SrTiO3 monocrystal substrate out of said H3PO4 solution.
7 more elements
Dependencies are inferred from the claim text.