BC13/AR chemistry for metal overetching on a high density plasma etcher
AssigneeAdvanced Micro Devices, Inc.
InventorAnne Sanderfer
Life of this patent
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Abstract
A method of manufacturing a semiconductor device by forming layers of materials on a semiconductor substrate and utilizing a series of etch chemistries to remove portions of the layers of materials to form a metal stack. A patterned layer of photoresist determines the portions of the layers that will be etched. An etch process etches a hardmask material, a breakthrough etch process etches an antireflection layer, a conventional main etch process etches approximately 80 percent of the metal film, a first overetch process for a first selected period of time and a second overetch process for a second selected period of time provides a metal film stack having straight profiles and smooth sidewalls.
Claims6
A method of manufacturing a semiconductor device, the method comprising:
- (a) forming a layer of oxide containing first metal structures electrically communicating with electrodes of active devices formed in an underlying substrate;
- (b) forming a barrier layer on the layer of oxide;
- (c) forming a layer of metal on the barrier layer;
- (d) forming an antireflection layer on the layer of metal;
- (e) forming a hard mask layer on the antireflection layer;
- (f) forming a layer of photoresist on the hard mask layer;
- (g) patterning and developing the layer of photoresist to leave second metal structures communicating with first metal structures;
- (h) an etch process to etch through the layer of a hard mask layer;
- (i) an etch process to etch through the antireflection layer;
- (j) an etch process to etch about 80% of the layer of metal;
- (k) a first overetch step for a first selected time;
- and
- (l) a second overetch step for a second selected time.
Dependencies are inferred from the claim text.