Nucleation and deposition of Pt films using ultraviolet irradiation
AssigneeMicron Technology, Inc.
InventorEugene P. Marsh
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Abstract
A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas through an organic platinum based metal precursor to facilitate transport of precursor vapor to the chamber. The platinum based film is deposited onto a non-silicon bearing substrate in a CVD deposition chamber in the presence of ultraviolet light at a predetermined temperature and under a predetermined pressure. The film is then annealed in an oxygen atmosphere at a sufficiently low temperature to avoid oxidation of substrate. The resulting film is free of silicide and consistently smooth and has good step coverage.
Claims15
A method for forming a memory capacitor comprising:
- (i) depositing a platinum group metal on a barrier layer formed over a substrate to form a lower electrode of said memory capacitor comprising:
- introducing said substrate into a CVD deposition chamber;
- introducing an organic platinum based metal precursor to said CVD deposition chamber and irradiating said organic precursor with ultraviolet light in said CVD deposition chamber at a predetermined temperature and pressure for a predetermined time to decompose said organic precursor and form a platinum group metal film on said barrier layer;
- and
- annealing said substrate in an oxygen atmosphere at low temperature;
- and
- (ii) forming a dielectric layer over said lower electrode;
- (iii) forming an electrode over said dielectric layer.
Dependencies are inferred from the claim text.