Method for fabricating titanium silicide film
AssigneeHyundai Electronics Industries Co., Ltd.
InventorYoon-Jik Lee
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Abstract
A method for fabricating a titanium silicide film in which when a titanium silicide film is fabricated by using a Chemical Vapor Deposition, an NH3-gas plasma process or an N2-gas plasma process is conducted for several times to minimize etching of the silicon substrate and consumption of a dopant of an impurity layer, thereby restraining a leakage current from increasing. The method for fabricating a titanium silicide film includes the steps of: (a) depositing a titanium silicide film as thick as {fraction (1/n)} of a total desired thickness on a silicon substrate by using the Chemical Vapor Deposition method; (b) processing the titanium silicide film with a nitrogen-gas plasma or ammonia-gas plasma; and (c) repeatedly performing step (a) and step (b) n times.
Claims5
A method for fabricating a titanium silicide film comprising the steps of:
- (a) forming a conductive layer on a semiconductor;
- (b) forming an insulating layer on the conductive layer;
- (c) selectively etching the insulating layer exposing a portion of the conductive layer, forming a contact hole;
- (d) forming a first titanium silicide film on the insulating layer, and on an inner wall surface and on a bottom surface of the contact hole using a Chemical Vapor Deposition method, wherein the first titanium silicide film is as thick as 1/n of a total desired thickness;
- (e) processing the first titanium silicide film with nitrogen-gas plasma or ammonia-gas plasma, forming a nitride film on the surface of the first titanium silicide film;
- and
- (f) repeatedly performing step (d) and (e) for n times, wherein n is at least one and wherein each nitride film is removed when a respective titanium silicide film is deposited on the nitride film.
Dependencies are inferred from the claim text.