US 6,387,794 B2 · Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device

Abstract

An electrode structure for a semiconductor device and a method for forming the electrode structure, and a mounted body including the semiconductor device are provided in which the semiconductor device can be easily connected to a circuit board with high reliability. An aluminum electrode is formed on an IC substrate. A passivation film is formed on the IC substrate so as to cover the peripheral portion of the aluminum electrode. A bump electrode is formed on the aluminum electrode by a wire bonding method. An aluminum oxide film is formed on the surface of the aluminum electrode that is exposed around the bump electrode. A conductive adhesive is applied as a bonding layer to the tip portion of the bump electrode of the semiconductor device by a transfer method or a printing method. The semiconductor device is aligned in the face-down state in such a manner that the bump electrode abuts on a terminal electrode of a circuit board, and is provided on a circuit board. In this state, the conductive adhesive is hardened. A gap between the IC substrate and the circuit board is filled with an insulating resin.

Claims4

Dependent claims

A method for forming a mounted body including a semiconductor device, in which the semiconductor device is mounted on a circuit board in a face-down state, comprising:

forming a bump electrode on an aluminum electrode of said semiconductor device;
forming an aluminum oxide sufficient for the prevention of corrosion in a surface layer of said aluminum electrode that is exposed around said bump electrode;
and
electrically connecting the bump electrode to a terminal electrode on the circuit board through a bonding layer after forming the aluminum oxide layer.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

09/197,334Filed 19 Nov 1998 · division

Priority

JP 7-17838614 Jul 1995

Published

US 2001/0014523 A116 Aug 2001

Granted

14 May 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification19 codes

H10W 74/15
Characterised by their shape or disposition: on active surfaces of flip-chip devices, e.g. underfills
H10W 20/065
By modifying the conductivity of conductive parts, e.g. by alloying: by making at least a portion of the conductive part non-conductive, e.g. by…
H10W 72/90
Interconnections or connectors in packages: bond pads, in general
H10W 74/012
Manufacture or treatment: of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills

Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device

Life of this patent

Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device

Life of this patent

Abstract

Claims4