Method for manufacturing microscopic canals within a semiconductor
AssigneeBAE Systems Information and Electronic Systems Integration Inc.
InventorsTom J. McIntyre, Tuyet T. Bach, Andrew TS Pomerene
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Abstract
A method for manufacturing microscopic canals within a semiconductor is disclosed. A shallow trench is initially formed on a substrate using a patterned photoresist. After the patterned photoresist has been removed from the substrate, a separation layer, such as a Titanium layer, is deposited on the substrate. Subsequently, a cap layer, such as a Titanium nitride layer, is deposited on the separation layer. Both the separation layer and the cap layer are then polished off from the surface of the substrate. Finally, a Tungsten layer is deposited on the substrate and in the trench such that a microcanal will be formed within the trench as a result.
Claims15
A method for manufacturing a microcanal within a semiconductor substrate, said method comprising:
- forming a shallow trench in a substrate using a patterned photoresist;
- removing said patterned photoresist to expose said trench within said substrate;
- depositing a separation layer on said substrate;
- depositing a cap layer on said separation layer;
- polishing said separation layer and said cap layer off from a surface of said substrate;
- and
- depositing a Tungsten layer on said substrate and in said trench such that a microcanal is formed within said trench as a result.
A method for manufacturing a microcanal on a semiconductor substrate, said method comprising:
- depositing a first silicon oxide layer on a substrate;
- depositing a phosphorus glass layer on said first silicon oxide layer;
- depositing a second silicon oxide layer on said phosphorus glass layer;
- forming a shallow trench in said first silicon oxide layer, said phosphorus glass layer, and said second silicon oxide layer using a patterned photoresist;
- removing said patterned photoresist to expose said trench;
- depositing a separation layer in said trench;
- depositing a cap layer on said separation layer;
- and
- depositing a Tungsten layer in said trench such that a microcanal is formed within said trench as a result.
Dependencies are inferred from the claim text.