Conversion of amorphous layer produced during IMP Ti deposition

Abstract

A method of fabricating a Ti-containing liner having good contact resistance and coverage of a contact hole is provided. The method which converts an amorphous region of ionized metal plasma deposited Ti into a substantially crystalline region includes (a) providing a structure having at least one contact hole formed therein, said at least one contact hole exposing at least a portion of a cobalt disilicide contact formed in a semiconductor substrate; (b) depositing a Ti/TiN liner in said at least one contact hole by ionized metal plasma deposition; (c) annealing said Ti/TiN liner under conditions effective to recrystallize any amorphous region formed during said annealing into a crystalline region including a TiSi2 top layer and a CoSix bottom layer; and (d) optionally forming a conductive material on said Ti/TiN liner.

Dependencies are inferred from the claim text.