Method for fabricating semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorJong Kwan Kim
Life of this patent
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Abstract
Method for fabricating a semiconductor device, including the steps of (1) forming a gate insulating film, a silicon layer, and an insulating film on a substrate in succession, (2) selectively removing a portion of the insulating film on which a gate electrode is to be formed, (3) forming first sidewalls at sides of the insulating film having the portion removed therefrom, (4) forming silicide on a surface of the exposed silicon, (5) forming a cap insulating film on the silicide and the first sidewalls, (6) removing the insulating film, and (7) using the cap insulating film as a mask in removing the exposed silicon layer, to form the gate electrode.
Claims18
A method for fabricating a semiconductor device, comprising the steps of:
- (1) forming a gate insulating film, a silicon layer, and an insulating film on a substrate in succession;
- (2) selectively removing a portion of the insulating film on which a gate electrode is to be formed;
- (3) forming first sidewalls at sides of the insulating film having the portion removed therefrom;
- (4) forming silicide on a surface of a first exposed portion of the silicon layer;
- (5) forming a cap insulating film on the silicide and the first sidewalls;
- (6) removing the insulating film;
- and
- (7) using the cap insulating film as a mask, removing a second exposed portion of the silicon layer to form the gate electrode.
A method for fabricating a semiconductor device, comprising the steps of:
- (1) forming a gate insulating film, a polysilicon layer, and a first insulating film on a substrate in succession;
- (2) selectively removing a portion of the first insulating film on which a gate electrode is to be formed;
- (3) forming second insulating film sidewalls at sides of the first insulating film having the portion removed therefrom;
- (4) forming silicide on a surface of a first exposed portion of the polysilicon layer;
- (5) forming a cap insulating film on the silicide and the second insulating film sidewalls;
- (6) removing the first insulating film;
- and
- (7) using the cap insulating film as a mask, selectively removing a second exposed portion of the polysilicon layer to form the gate electrode.
A method for fabricating a semiconductor device, comprising the steps of:
- (1) forming a gate insulating film, a polysilicon layer, and an insulating film on a substrate in succession;
- (2) selectively removing a portion of the insulating film on which a gate electrode is to be formed;
- (3) forming polysilicon sidewalls at sides of the insulating film having the portion removed therefrom;
- (4) forming silicide on surfaces of a first exposed portion of the polysilicon layer and the polysilicon sidewalls;
- (5) forming a cap insulating film on the silicide;
- (6) removing the insulating film;
- and
- (7) using the cap insulating film as a mask, selectively removing a second exposed portion of the polysilicon layer to form the gate electrode.
Dependencies are inferred from the claim text.