Lithography and etching process
AssigneeUnited Microelectronics Corp.
InventorJain-Hon Chen
Life of this patent
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Abstract
A lithography and etching process, which is applicable on a substrate, is described. A material layer to be patterned is formed on the substrate, then a silicon oxynitride layer of more than 800 angstroms in thickness is formed over the material layer. Subsequently, a patterned photoresist layer is formed over the silicon oxynitride layer, followed by removing the exposed silicon oxynitride layer by using the photoresist layer as a mask, and removing the exposed material layer by using the patterned silicon oxynitride layer as a mask to form a patterned material layer.
Claims17
A lithography and etching process applicable to a substrate, comprising the steps of:
- forming a material layer to be patterned on the substrate;
- forming a silicon oxynitride layer of more than 800 angstroms in thickness directly on the material layer;
- forming a patterned photoresist layer over the silicon oxynitride layer;
- removing an exposed silicon oxynitride layer by using the photoresist layer as a mask;
- and
- removing an exposed material layer by using the silicon oxynitride layer as a hard mask to form a patterned material layer.
A manufacturing process for a gate, applicable to a substrate on which a gate oxide layer is formed, comprising:
- forming a silicon layer over the gate oxide layer, wherein the silicon layer is predetermined to be patterned to form a gate electrode;
- forming a silicon oxynitride layer of more than 800 angstroms in thickness directly on the silicon layer;
- forming a patterned photoresist layer over the silicon oxynitride layer;
- removing an exposed silicon oxynitride layer by using said the photoresist layer as a mask;
- and
- removing an exposed silicon layer by using the silicon oxynitride layer as a mask to form a gate with a remaining silicon layer.
A process for forming a patterned metal layer, applicable to a substrate, comprising the steps of:
- forming a metal layer on the substrate, wherein the metal layer is predetermined to be patterned in a subsequent step;
- forming a silicon oxynitride layer of more than 800 angstroms in thickness directly on the metal layer;
- forming a patterned photoresist layer over the silicon oxynitride layer;
- removing an exposed silicon oxynitride layer by using the photoresist layer as a mask;
- and
- removing an exposed metal layer by using the silicon oxynitride layer as a mask to form a patterned metal layer.
Dependencies are inferred from the claim text.