Fabrication of MIM capacitor in copper damascene process

A method for forming an MIM capacitor, comprising the steps;

• providing a semiconductor structure having an exposed lower copper damascene;
• forming a high-k capacitor layer over the semiconductor structure and the exposed lower copper damascene;
• forming a low-k organic etch stop layer upon the high-k capacitor layer;
• forming an JMD layer upon the low-k organic etch stop layer;
• etching the IMD layer with a first etch highly selective to the IMD layer as compared to the low-k organic etch stop layer, to form an IMD trench exposing a portion of the low-k organic etch stop layer;
• etching the exposed portion of the low-k organic etch stop layer with a second etch method highly selective to the exposed portion of the low-k organic etch stop layer as compared to the high-k capacitor layer, to expose a portion of the high-k capacitor layer;
• and
• forming an upper copper damascene upon the exposed portion of the high-k capacitor layer and within the IMD trench to complete formation of the MIM capacitor.

A method for forming an MIM capacitor, comprising the steps;

• providing a semiconductor structure having an exposed lower metal damascene;
• forming a capacitor layer over the semiconductor structure and the exposed lower metal damascene;
• forming an organic etch stop layer upon the capacitor layer;
• forming an IMD layer upon the organic etch stop layer;
• forming a photoresist layer upon the IMD layer;
• patterning the photoresist layer to form a patterned photoresist mask layer having a photoresist layer opening exposing a portion of IMD layer;
• etching the exposed IMD layer portion using a first etch method highly selective to the IMD layer as compared to the organic etch stop layer, to form an IMD trench exposing a portion of the organic etch stop layer;
• etching the exposed portion of the organic etch stop layer with a second etch method highly selective to the exposed portion of the organic etch stop layer as compared to the capacitor layer, to expose a portion of the capacitor layer and simultaneously removing the patterned photoresist layer;
• and
• forming an upper metal damascene upon the exposed portion of the capacitor layer and within the IMD trench to complete formation of the MIM capacitor.