Methods for forming patterned layers including notched etching masks
AssigneeSamsung Electronics Co., Ltd.
InventorWon Jong Yoo
Life of this patent
Estimating the term…
Abstract
A method for patterning a layer of a microelectronic device includes the step of forming an etching mask on the layer to be etched opposite the microelectronic substrate. The etching mask defines exposed portions of the material layer and the etching mask has a notch in the sidewall thereof adjacent the material layer. The exposed portions of the material layer are then etched. More particularly, the step of forming the etching mask can include the steps of forming a first patterned mask layer on the layer to be etched and forming a second patterned mask layer on the first patterned mask layer wherein the second patterned mask layer extends beyond the first patterned mask layer thereby defining the notch in the sidewall of the etching mask.
Claims31
A method for patterning a layer of a microelectronic device, said method comprising the steps of:
- forming a layer of a material to be patterned on a microelectronic substrate;
- forming an etching mask on said material layer opposite said microelectronic substrate wherein said etching mask defines exposed portions of said material layer and wherein said etching mask has a notch in a sidewall thereof adjacent said material layer wherein said step of forming said etching mask comprises the steps of,
- forming a first patterned mask layer comprising a first mask material on said material layer, and
- forming a second patterned mask layer comprising a second mask material on said first patterned mask layer wherein said first and second mask materials are different and wherein said second patterned mask layer extends beyond said first patterned mask layer thereby defining said notch in said sidewall of said etching mask adjacent said material layer;
- and
- etching said exposed portions of said material layer defined by said etching mask.
A method for patterning a layer of a microelectronic device, said method comprising the steps of:
- forming a layer of a material to be patterned on a microelectronic substrate;
- forming an etching mask on said material layer opposite said microelectronic substrate wherein said etching mask defines exposed portions of said material layer and wherein said etching mask has a notch in a sidewall thereof adjacent said material layer wherein said step of forming said etching mask comprises the steps of,
- forming a first masking layer comprising a first mask material on said material layer opposite said substrate,
- forming a second masking layer comprising a second mask material on said first masking layer opposite said substrate wherein said first mask material and said second mask material are different,
- patterning said second masking layer thereby exposing portions of said first masking layer, and
- etching said first masking layer using said second patterned masking layer as a mask so that a portion of said second patterned masking layer extends beyond said etched first masking layer thereby exposing said exposed portions of said material layer and defining said notch in said sidewall of said etching mask adjacent said material layer;
- and
- etching said exposed portions of said material layer defined by said etching mask.
A method for patterning a layer of a microelectronic device, said method comprising the steps of:
- forming a layer of a material to be patterned on a microelectronic substrate wherein said material layer comprises a material chosen from the group consisting of Pt, Ir, Ru, BST, and PZT;
- forming an etching mask on said material layer opposite said microelectronic substrate wherein said etching mask defines exposed portions of said material layer and wherein said etching mask has a notch in a sidewall thereof adjacent said material layer wherein said etching mask comprises a negative photoresist;
- and
- etching said exposed portions of said material layer defined by said etching mask.
A method for patterning a layer of a microelectronic device, said method comprising the steps of:
- forming a layer of a material to be patterned on a microelectronic substrate;
- forming an etching mask on said material layer opposite said microelectronic substrate wherein said etching mask defines exposed portions of said material layer and wherein said etching mask has a notch in a sidewall thereof adjacent said material layer wherein said etching mask comprises a negative photoresist;
- and
- etching said exposed portions of said material layer defined by said etching mask wherein said step of etching said material layer comprises etching said material layer using Ar/Cl2/O2 as an etchant gas.
A method for patterning a layer of a microelectronic device, said method comprising the steps of:
- forming a layer of a material to be patterned on a microelectronic substrate;
- forming an etching mask on said material layer opposite said microelectronic substrate wherein said etching mask defines exposed portions of said material layer and wherein said etching mask has a notch in a sidewall thereof adjacent said material layer so that a portion of the sidewall at the notch is spaced apart from said layer of said material to be patterned;
- etching said exposed portions of said material layer defined by said etching mask;
- and
- removing said etching mask.
A method for patterning a layer of a microelectronic device, said method comprising the steps of:
- forming a layer of a material to be patterned on a microelectronic substrate;
- forming an etching mask on said material layer opposite said microelectronic substrate wherein said etching mask defines exposed portions of said material layer and wherein said etching mask has a notch in a sidewall thereof adjacent said material layer;
- etching said exposed portions of said material layer defined by said etching mask wherein said step of etching said material layer results in the formation of material redeposits on said sidewall of said etching mask;
- and
- removing said etching mask wherein said material redeposits are removed during said step of removing said etching mask.
A method for forming a capacitor for a microelectronic device, said method comprising the steps of:
- forming an interlayer dielectric on a microelectronic substrate wherein said interlayer dielectric has a contact hole therein exposing a portion of said microelectronic substrate;
- forming a conductive via in said contact hole;
- forming a conductive layer on said interlayer dielectric and on said conductive via opposite said microelectronic substrate;
- forming an etching mask on said conductive layer opposite said microelectronic substrate wherein said etching mask defines exposed portions of said conductive layer and wherein said etching mask has a notch in a sidewall thereof adjacent said conductive layer;
- etching said exposed portions of said conductive layer defined by said etching mask thereby providing a capacitor storage electrode on said interlayer dielectric and on said conductive via;
- removing said etching mask;
- forming a capacitor dielectric layer on said capacitor storage electrode opposite said microelectronic substrate;
- and
- forming a capacitor plate electrode on said capacitor dielectric layer opposite said capacitor storage electrode.
Dependencies are inferred from the claim text.