Thin-film capacitors and methods for forming the same
AssigneeConexant Systems, Inc.
InventorArjun Kar Roy
Life of this patent
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Abstract
An improved thin-film capacitor and methods for forming the same on a surface of a substrate are disclosed. The capacitor includes a bottom conducting plate formed by depositing conductive material within a trench of an insulating layer and planarizing the conducting and insulating layers. A dielectric film is then deposited on the substrate surface, such that at least a portion of the dielectric material remains over the bottom conducting plate. A second conductive layer is then deposited over the surface of the substrate, patterned and etched such that at least a portion of the second conducting material resides over at least a portion of the dielectric material.
Claims13
A method for forming a capacitor on a surface of a substrate, the method comprising:
- depositing a first insulating material on the surface of the substrate;
- forming a trench within said insulating material;
- depositing a first conductive material onto said first insulating material;
- removing a portion of said conductive material to form a base plate such that the top surface of said first conductive material and said first insulating material are substantially planar;
- forming an insulating layer over said conductive material;
- and
- forming a top plate of a capacitor, wherein said top plate is formed by depositing a second conductive material and etching said second conductive material such that at least a portion of said second conductive material resides over said insulating layer.
A method of forming a thin-film capacitor, the method comprising the steps of:
- forming a first insulating layer on a surface of a substrate;
- forming a trench within said first insulating layer;
- depositing a first conductive material onto said first insulating material;
- removing a portion of said conductive material to form a base plate such that the top surface of said first conductive material and said first insulating layer are substantially planar;
- forming a dielectric layer over said conductive material, said dielectric layer in contact with said first insulating layer;
- forming a top plate of a capacitor, wherein said top plate is formed by depositing a second conductive material and etching said second conductive material such that at least a portion of said second conductive material resides over said insulating layer;
- and
- forming a conductive feature through a portion of said dielectric layer.
A method of forming a microelectronic capacitor, the method comprising the steps of:
- forming a first insulating layer on a surface of a substrate;
- forming a trench within said first insulating layer;
- depositing a first conductive material onto said first insulating material;
- removing a portion of said conductive material to form a base plate such that the top surface of said first conductive and said first insulating layer are substantially planar;
- forming a dielectric structure overlying said base plate and in contact with said first insulating material;
- and
- forming a top plate of the capacitor, said top plate in contact with said first insulating layer and said dielectric structure.
Dependencies are inferred from the claim text.