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US 6,387,766 B1Granted
Method for manufacturing an integrated circuit with low threshold voltage differences of the transistors therein
AssigneeInfineon Technologies AG
InventorDirk Schumann
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Abstract
In an integrated circuit with low threshold voltage differences of the transistors and a manufacturing process for such an integrated circuit, MOS transistors of different lengths but having threshold voltages that are substantially the same are made by avoiding dopant peaks at the channel edges by an angled nitrogen implantation, so that implantation paths at those edges are occupied by nitrogen atoms.
Claims3
A method for manufacturing an integrated circuit in a semiconductor body comprising the steps of:
- defining a first channel length for a channel region of a first MOS field effect transistor in said semiconductor body and defining a second channel length for a channel region of a second MOS field effect transistor in said semiconductor body, said first and second channel lengths being unequal in length;
- implanting nitrogen into said semiconductor body at each of said channel regions at an angle differing from 90°;
- generating a channel covering at edges of each of said channel regions;
- and
- doping said semiconductor body to generate a source region and a drain region in each of said first and second MOS field effect transistors.
2 more elements
Dependencies are inferred from the claim text.