Method of manufacturing a capacitor in a semiconductor device
AssigneeHyundai Electronics Co., Ltd.
InventorChan Lim
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Abstract
The present invention relates generally to a method of manufacturing a semiconductor device. There is disclosed a method of manufacturing a semiconductor device capable of obtaining a higher static capacity and a lower leak current characteristic. According to the present invention, the method includes forming a lower electrode and forming a tantalum oxide film. In particular, it performs a plasma process during the process of forming the tantalum oxide film, and in the last step of forming the tantalum oxide firm it controls the amount of source fluid to form a tantalum oxy-nitride film, thus forming an upper electrode.
Claims9
A method of manufacturing a capacitor in a semiconductor device, the capacitor comprising a lower electrode, a first tantalum oxide film on top of the lower electrode, a second tantalum oxide film on top of the first tantalum oxide film, a tungsten oxy-nitride film on top of the second tantalum film and an upper electrode on the tungsten oxy-nitride film, the method comprising the steps of:
- forming a lower electrode on a semiconductor substrate;
- forming a first tantalum oxide film on said lower electrode;
- performing a plasma process on the first tantalum oxide film;
- forming a second tantalum oxide film on the first tantalum oxide film;
- forming a tantalum oxy-nitride film on the second tantalum oxide film;
- and
- forming an upper electrode on said tantalum oxy-nitride film.
Dependencies are inferred from the claim text.