Method of fabricating semiconductor laser diode
AssigneeOki Electric Industry Co., Ltd.
InventorsYukio Katoh, Hiroshi Wada, Keizo Takemasa
Life of this patent
Estimating the term…
Abstract
A mask layer is formed on a semiconductor substrate such that an elongate opening of the mask layer extends lengthwise at an angle relative to a [011] direction of the semiconductor substrate. A ridge waveguide structure including an active layer is formed within the elongate opening on the semiconductor substrate by a selective growth method using the mask layer as a mask. The mask layer is then removed, and a clad layer is formed over the ridge waveguide structure.
Claims11
A method of fabricating a semiconductor laser diode, comprising:
- forming a patterned mask layer on a semiconductor substrate, said mask layer having an elongate opening which extends lengthwise at an angle relative to a [011] direction of said semiconductor substrate;
- selectively growing a waveguide structure having an active layer on said semiconductor substrate and within said elongate opening of said mask layer using said mask layer is used as a mask;
- removing said mask layer;
- and
- forming a clad layer over said ridge waveguide structure.
A method of fabricating a semiconductor laser diode, comprising:
- forming a pair of strip-shaped mask layers on a semiconductor substrate, said mask layers defining an elongate opening therebetween which extends lengthwise at an angle relative to a [011] direction of said semiconductor substrate;
- selectively growing a waveguide structure having an active layer on said semiconductor substrate and within said elongate opening of said mask layers using said mask layers used as a mask;
- removing said mask layers;
- and
- forming a clad layer over said ridge waveguide structure after removing said mask layers.
A method of fabricating a semiconductor laser diode, comprising:
- forming a patterned mask layer on a semiconductor substrate, said mask layer having an elongate opening which extends lengthwise at an angle relative to a [011] direction of said semiconductor substrate, said mask layer further having opposing sidewalls extending along respectively opposite sides of said elongate opening;
- selectively growing a waveguide structure having an active layer on said semiconductor substrate and within said elongate opening of said mask layer using said mask layer as a mask, said waveguide structure further having opposite sidewalls which respectively contact said opposing sidewalls of said mask layer;
- removing said mask layer to expose said opposite sidewalls of said waveguide structure;
- and
- forming a clad layer over said waveguide structure after removing said mask layer.
Dependencies are inferred from the claim text.