Manufacturing a semiconductor device with isolated circuit-element formation layers of different thicknesses
AssigneeAsahi Kasei Microsystems Co., Ltd.
InventorMichihiro Kawano
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Abstract
Silicon layers 2a, 2b comprised of different thicknesses are formed concurrently so as to be isolated from each other while a silicon oxide layer 1 serving as a foundation layer is controlled to be free from hollows by implanting ions only into a field silicon oxide layer 5a comprised of a thick film thickness among field silicon oxide layers 5a, 5b to be used for separating circuit elements, and thereby altering etching rates of the field silicon oxide layers 5a, 5b.
Claims12
A method of manufacturing a semiconductor device having isolating circuit-element formation layers comprised of different thicknesses on an insulating layer, comprising the processes of:
- forming a plurality of circuit-element formation layers each of which is partitioned by steps and comprised of a different film thickness on said insulating layer;
- forming an antioxidation film on each region according to said circuit-element formation layer comprised of said different film thickness;
- oxidizing said circuit-element formation layers by using said antioxidation film as a mask to form field oxide films comprised of different thicknesses between said circuit-element formation layers;
- implanting ions only into said field oxide films comprised of a thick film thickness among said field oxide films comprised of different thicknesses;
- and
- etching concurrently said field oxide films comprised of different thicknesses.
Dependencies are inferred from the claim text.