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US 6,387,737 B1Granted
Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideaki Kuwabara, Yasuyuki Arai
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Abstract
A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
Claims59
A method of fabricating a semiconductor device, comprising the steps of:
- forming a gate wiring line by using a first mask;
- forming an insulating film covering the gate wiring line;
- forming a first amorphous semiconductor film on the insulating film;
- forming a second amorphous semiconductor film containing an impurity element to give an n-type conductivity on the first amorphous semiconductor film;
- forming a first conductive film on the second amorphous semiconductor film;
- forming a source wiring line and an electrode by selectively removing the insulating film, the first amorphous semiconductor film, the second amorphous semiconductor film, and the first conductive film by using a second mask;
- forming a second conductive film being in contact with and overlapping with the source wiring line and the electrode;
- and
- forming a source region and a drain region comprising the second amorphous semiconductor film, and a pixel electrode made of the second conductive film by selectively removing a part of the first amorphous semiconductor film, the second amorphous semiconductor film, the first conductive film, and the second conductive film by using a third mask.
6 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- forming a gate electrode over a substrate;
- forming a first semiconductor film on said gate electrode with an insulating film interposed therebetween;
- forming a second semiconductor film having an impurity element to give one conductivity on the first semiconductor film;
- forming a first conductive film on the second semiconductor film;
- patterning the insulating film, the first semiconductor film, the second semiconductor film, and the first conductive film;
- forming a second conductive film being in contact with and overlapping with remained lamination of the insulating film, the first semiconductor film, the second semiconductor film, and the first conductive film;
- and
- selectively removing a part of the first semiconductor film, the second semiconductor film, the first conductive film, and the second conductive film by using a same mask.
5 more elements
A method of fabricating a semiconductor device comprising the steps of:
- forming a gate wiring line by using a first mask;
- forming an insulating film covering the gate wiring line;
- forming a first semiconductor film on the insulating film;
- forming a second semiconductor film containing an impurity element to give one conductivity on the first semiconductor film;
- forming a first conductive film on the second semiconductor film;
- patterning the insulating film, the first semiconductor film, the second semiconductor film, and the first conductive film by using a second mask;
- forming a second conductive film over at least a remained first conductive film;
- and
- selectively removing a part of the first semiconductor film, the second semiconductor film, the first conductive film, and the second conductive film by using a third mask.
6 more elements
A method of fabricating a semiconductor device comprising the steps of:
- forming a gate electrode by using a first mask;
- forming an insulating film covering the gate electrode;
- forming a first semiconductor film on the insulating film;
- forming a second semiconductor film containing an impurity element to give one conductivity on the first semiconductor film;
- forming a first conductive film on the second semiconductor film;
- patterning the insulating film, the first semiconductor film, the second semiconductor film, and the first conductive film by using a second mask;
- forming a second conductive film over a remained first conductor film;
- and
- forming a source region and a drain region comprising the second semiconductor film, and a pixel electrode comprising the second conductive film by selectively removing a part of the first semiconductor film, the second semiconductor film, the first conductive film, and the second conductive film by using a third mask.
6 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- forming a gate wiring line over a substrate by using a first mask;
- forming an insulating film covering the gate wiring line;
- forming a first semiconductor film on the insulating film;
- forming a second semiconductor film containing an impurity element to give one conductivity on the first semiconductor film;
- forming a first conductive film on the second semiconductor film;
- patterning the insulating film, the first semiconductor film, the second semiconductor film, and the first conductive film by using a second mask;
- forming a second conductive film covering the substrate;
- and
- selectively removing a part of the first semiconductor film, the second semiconductor film, the first conductive film, and the second conductive film by using a third mask, thereby a pixel electrode comprising the second conductive film, source and drain electrodes comprising the first conductive film, and an input terminal comprising the second conductive film are formed.
6 more elements
Dependencies are inferred from the claim text.