Method and structure for bonding layers in a semiconductor device

A semiconductor device fabrication method for bonding an amorphous silicon layer to a titanium nitride layer, said amorphous silicon layer and said titanium nitride layer having relatively weak bonding characteristics with respect to each other, said method comprising the steps of:

• providing an oxide layer which has relatively strong bonding characteristics with respect to amorphous silicon and titanium nitride, said oxide layer being electrically non-conductive;
• forming said titanium nitride layer onto said oxide layer, including forming anchoring channels within said titanium nitride layer, said anchoring channels exposing portions of said oxide layer for bonding with said amorphous silicon layer;
• and
• depositing said amorphous silicon layer onto said titanium nitride layer and into said anchoring channels in order to provide structural stability at the interface of said titanium nitride layer and said amorphous silicon layer, said amorphous silicon layer forming relatively strong bonds with said exposed portions of said oxide layer, said relatively strong bonds between sand amorphous silicon layer and said oxide layer being electrically non-conductive.

A semiconductor device fabrication method for bonding second and third layers formed of materials having weak adhesion characteristics with respect to each other, said method comprising the steps of:

• providing a first layer on a semiconductor substrate, said first layer being electrically non-conductive, said first layer having properties which provide relatively strong adhesion when in contact with either said second layer or said third layer;
• forming said second layer on said first layer, said second layer having a first surface in contact with said first layer and having a second surface opposite said first surface, said second layer being formed to include anchoring channels that pass from said first surface of said second layer to said first layer, said second layer being electrically conductive;
• and
• in the absence of electrical connection to said second layer, depositing said third layer on said second surface of said second layer and into said anchoring channels within said second layer such that said third layer bonds to said first layer, thereby providing structural stability in joining said first, second and third layers.