Hybrid S.C. devices and method of manufacture thereof

A method of fabricating a semiconductor device comprising four substantially identical semiconductor diode chips, each of said chips having top and bottom surfaces, the method comprising the steps of a) mounting said four chips, bottom surfaces down, in electrical contact with respective chip mounting pads, a first and a second of said pads being integrally connected to one another for electrically interconnecting the bottom surfaces of a first and a second chip mounted respectively on said first and second pads, b) electrically interconnecting the top surface of a third chip mounted on a third pad to the top surface of a fourth chip mounted on a fourth pad, c) electrically interconnecting said third and fourth pads to the top surfaces of said first and second chips, respectively, d) electrically connecting a first device terminal to said first and second interconnected pads, e) electrically interconnecting second and third device terminals to said third and fourth pads, respectively, and f) electrically interconnecting a fourth device terminal to one of the electrically interconnected top surfaces of said third and fourth chips, and

• g) providing said integrally connected first and second pads, said third and fourth pads, said first, second and third terminals, and a portion of said fourth terminal as integral portions of cantilevered leads forming one of a plurality of identical groups of leads on a single lead frame,
• wherein said first, second and third terminal are portions of respective first, second and third leads including said integrally connected first and second pads and third and fourth pads, respectively,
• wherein said electrical interconnections other than said integral connections are provided by disposing pre-shaped metal jumpers in bridging, bonded relationships with the surfaces being electrically interconnected.