Field emission tips and methods for fabricating the same

Abstract

The present invention relates to field emitters and methods of fabricating the same wherein the field emission tips of the field emitters are formed by utilization of a facet etch. An etch mask is patterned on a conductive substrate in the locations desired for subsequently formed field emission tips. The conductive substrate is then anisotropically etched to translate the shape of the mask into the conductive substrate which forms a vertical column from the conductive substrate. The etch mask is then removed and the vertical column is facet etched to form the field emission tip. Low work function materials may also be incorporated into the field emission tips to improve field emission tip performance by depositing a layer of low work function material on the conductive substrate prior to patterning the etch mask. Furthermore, a sacrificial layer may be utilized to assist the removal of any redeposition materials formed during the facet etch by depositing the sacrificial material over the vertical column prior to facet etching. After facet etching, the redeposition material may be removed using a known clean-up technique.

Dependencies are inferred from the claim text.