US 6,387,589 B1 · Photoresist polymers and photoresist compositions containing the same

Abstract

The present invention provides photoresist polymers and photoresist compositions comprising the same. The photoresist polymer is represented by the following Chemical Formula 5. Photoresist compositions containing the polymers of the present invention have superior transmittance at 157 nm wavelength, etching resistance, heat resistance, and adhesiveness. In addition, photoresist compositions of the present invention can be developed easily in 2.38 wt % aqueous TMAH solution, and are therefore suitable for lithography processes using a 157 nm wavelength-light source for fabricating a minute circuit of a high integration semiconductor device: wherein R, R*, X, Y, V, W, i, j, w, x, y and z are as described herein.

Claims24

Dependent claims

A photoresist polymer derived from a monomer comprising:

(a) a compound of the Formula;
wherein
R is substituted or unsubstituted linear or branched (C1-C10) alkylene, substituted or unsubstituted (C2-C10) alkylene comprising an other linkage, substituted or unsubstituted (C2-C10) alkylene comprising an ester linkage, or substituted or unsubstituted (C3-C10) alkylene comprising a ketone moiety;
X and Y are independently CH2, CH2CH2, oxygen or sulfur;
and
i is an integer from 0 to 2;
(b) a compound of the formula:
wherein
V and W are independently CH2, CH2CH2, oxygen or sulfur;
R* is an acid-labile group;
and
j is an integer from 0 to 2;
and
(c) tetrafluoro ethene.

11 more elements

Dependencies are inferred from the claim text.

Photoresist polymers and photoresist compositions containing the same

Life of this patent

Photoresist polymers and photoresist compositions containing the same

Life of this patent

Abstract

Claims24