Exchange coupling film and magnetoresistance effect type element using this exchange coupling film, and thin film magnetic head using the magnetoresistance effect type element
AssigneeAlps Electric Co., Ltd.
InventorsNaoya Hasegawa, Masamichi Saito, Kazuya Oominato, Yutaka Yamamoto, Akihiro Makino
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Abstract
The antiferromagnetic layer 4 is formed of the X—Mn alloy (X is an platinum group element) and the interface structure of with the pinned magnetic layer 3 is made to be non-coherent by properly adjusting the composition ratio of X. Consequently, the crystal structure of the antiferromagnetic layer 4 is transformed so as to obtain a large exchange anisotropic magnetic field by subjecting the layer to a heat treatment, making it possible to improve the reproduction characteristic over the conventional art.
Claims103
An exchange coupling film in which an antiferromagnetic layer is formed in direct contact with a ferromagnetic layer, an exchange anisotropic magnetic field is generated at the interface between the antiferromagnetic layer and ferromagnetic layer and the magnetization direction of said ferromagnetic layer is fixed along a prescribed direction,
- wherein said antiferromagnetic layer is formed of an antiferromagnetic material containing:
- at least one element X selected from the group consisting of Pt, Pd, Ir, Rh, Ru and Os;
- and
- Mn, and
- the interface structure between said antiferromagnetic layer and said ferromagnetic layer being non-coherent.
Dependencies are inferred from the claim text.