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AssigneeKabushiki Kaisha Kobe Seiko Sho
InventorsKatsutoshi Takagi, Takashi Onishi
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The present invention provides an Al alloy thin film for a semiconductor device electrode having an electrical resistivity of as low as 6 μΩcm or less, high hillock resistance, high void resistance, and high corrosion resistance against an alkaline solution, which are required for an electrode thin film of large-screen liquid crystal display (LCD) or high-resolution LCD. The present invention also provides a sputtering target to deposit the Al alloy film by sputtering process for a semiconductor device electrode. The Al alloy thin film for a semiconductor device electrode satisfies the conditions of Y≧0.3 at %, IVa group metal element≧0.2 at %, and 0.3Cy+3CIVa≦2 (wherein Cy: Y content (at %), CIVa: content of IVa group metal element (at %)), and the sputtering target is made of an Al alloy satisfying the above conditions.
An Al alloy thin film for a semiconductor device electrode with excellent corrosion resistance, hillock resistance and void resistance, and an electrical resistivity of 6 μΩcm or less, comprising as alloy components 0.3 atomic % or more of Y, and 0.2 atomic % or more of Hf, wherein the contents of Y and Hf satisfy the following equation (1):
A sputtering target to deposit an Al film by sputtering process for a semiconductor device electrode comprising an Al alloy comprising as alloy components 0.3 atomic % or more of Y, and 0.2 atomic % or more of Hf, wherein the contents of Y and Hf satisfy the following equation (2):
Dependencies are inferred from the claim text.