Inductive coupling plasma processing apparatus

An inductive coupling plasma processing apparatus including a processing chamber in which a plasma is generated in an atmosphere including a process gas, a high-frequency antenna for receiving high-frequency power and generating an inductive electric field in the processing chamber, and a dielectric wall disposed to contact the plasma, said inductive coupling plasma processing apparatus comprising:

• a cover member disposed to prevent a main portion of said dielectric wall portion from being exposed in said processing chamber, and formed of a dielectric material;
• heating means for heating said cover member at a temperature at which a reaction product produced by the plasma generated in said processing chamber is inhibited from adhering to said cover member;
• and
• insulating means for preventing heat generated by said heating means from being conducted to said dielectric wall portion.

An inductive coupling plasma processing apparatus comprising:

• a processing chamber for subjecting a substrate to be treated to a plasma processing;
• a process gas supply system for supplying a process gas into said processing chamber;
• an exhaust system for evacuating said processing chamber;
• a dielectric wall portion constituting an upper part wall portion of said processing chamber;
• a high-frequency antenna, disposed on an upper surface of said dielectric wall portion outside said processing chamber, for forming an induction field by a supplied high-frequency power in said processing chamber;
• a cover member formed of a dielectric material disposed inside said processing chamber of said dielectric wall portion to cover said dielectric wall portion;
• a sheet-shaped heater disposed between said cover member and said dielectric wall portion;
• and
• an insulating member, disposed between said dielectric wall portion and said sheet-shaped heater, for insulating between said dielectric wall portion and said heater,
• wherein the process gas is formed into a plasma by said induction field and the substrate to be treated is subjected to the plasma processing.

An inductive coupling plasma processing apparatus comprising:

• a processing chamber for subjecting a substrate to be treated to a plasma processing;
• a process gas supply system for supplying a process gas into said processing chamber;
• an exhaust system for evacuating said processing chamber;
• a dielectric wall portion constituting an upper wall of said processing chamber;
• a high-frequency antenna, disposed on an upper surface of said dielectric wall portion outside said processing chamber, for forming an induction field by a supplied high-frequency power in said processing chamber;
• a cover member formed of a dielectric material disposed inside said processing chamber of said dielectric wall portion to cover said dielectric wall portion;
• a sheet-shaped heater disposed between said cover member and said dielectric wall portion;
• and
• an insulating member, disposed between said dielectric wall portion and said sheet-shaped heater, for insulating between said dielectric wall portion and said heater,
• wherein the process gas is formed into a plasma by said induction field and the substrate to be treated is subjected to the plasma processing.