Apparatus and method for processing substrate

An apparatus for processing a substrate, comprising:

• a processing chamber having a gas ejection head to individually receive at least two gases including a material gas, and eject the at least two gases toward a substrate to be processed, wherein said gas ejection head includes
• (i) at least two gas passageways through which the at least two gases are to individually flow, and
• (ii) at least two temperature control devices to individually control or maintain temperatures of the at least two gases as the at least two gases individually flow through said at least two gas passageways;
• a gas supply source to supply the at least two gases to said gas ejection head;
• and
• a substrate holder disposed in said processing chamber in confronting relationship to said gas ejection head.

An apparatus for processing a substrate, comprising:

• a processing chamber to process a substrate therein;
• a substrate holder disposed in said processing chamber, to hold and heat said substrate;
• and
• a temperature-adjusting gas introducing device to introduce a temperature-adjusting gas into said processing chamber for performing at least one of heating the substrate and cooling the substrate at a predetermined position within said processing chamber,
• wherein said temperature-adjusting gas introducing device includes a gas ejection head to individually receive at least two gases, and eject the at least two gases toward a substrate to be processed, wherein said gas ejection head includes
• (i) at least two gas passageways through which the at least two gases are to individually flow, and
• (ii) at least two temperature control devices to individually control or maintain temperatures of the at least two gases as the at least two gases individually flow through said at least two gas passageways.