Fused vertical coupler for switches, filters and other electro-optic devices
AssigneeThe Regents of the University of California
InventorsJohn E. Bowers, Bin Liu, Patrick Abraham, Boo-Gyoun Kim, Ali Shakouri
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Abstract
A vertical directional coupler fabricated using wafer fusion with a very short coupling length for fabrication of switches, filters and other electro-optic devices. Using the fused vertical coupler, planar waveguides can be fabricated on two different substrates in a three-dimensional structure in which there is vertical coupling between arrays through fused regions. Switches, including crossbar switches based on coupling between independent arrays of waveguides, as well as filters, can be fabricated.
Claims26
A fused vertical electro-optic construct comprising a first waveguide structure on a first substrate which is vertically coupled through a fused gap layer to a second waveguide structure on a second substrate.
A fused vertical electro-optic coupler construct, comprising:
- (a) a first substrate layer;
- (b) a first waveguide layer adjacent to said first substrate layer;
- (c) a second substrate layer;
- (d) a second waveguide layer adjacent to said second substrate layer;
- (e) a fused gap layer between said waveguide layers joining and optically coupling said waveguide layers.
A fused vertical electro-optic construct comprising a first single-mode ridge-loaded waveguide structure on a substrate which is vertically coupled through a fused gap layer to a second single-mode ridge loaded waveguide structure on a substrate.
A fused vertical electro-optic coupler, comprising:
- (a) a first InP substrate layer;
- (b) a first InGaAsP guiding layer adjacent to said first substrate layer;
- (c) an InP coupling layer adjacent to said first guiding layer;
- (d) a second InP cladding layer adjacent to said coupling layer;
- (e) a second InGaAsP guiding layer adjacent to said second cladding layer;
- and
- (f) a second InP substrate layer adjacent to said second guiding layer
- (g) said coupling layer being fusion bonded to a said one of said cladding layers.
A fused vertical electro-optic coupler, comprising:
- (a) an n+ doped InP substrate layer;
- (b) a first InGaAsP guiding layer adjacent to said n+ doped substrate layer;
- (c) an InP coupling layer adjacent to said first guiding layer;
- (d) a second InP cladding layer adjacent to said coupling layer;
- (e) a second InGaAsP guiding layer adjacent to said second cladding layer;
- and
- (f) a p+ doped InP substrate layer adjacent to said second guiding layer
- (g) said coupling layer being fusion bonded to a said one of said cladding layers.
A fused vertical electro-optic coupler, comprising:
- (a) a GaAs substrate layer;
- (b) an InP substrate layer;
- (c) an InGaAsP guiding layer between said GaAs substrate layer and said InP substrate layer;
- (d) an InP cladding layer between said InP coupling a layer and said InP substrate layer;
- (e) an AlGaAs cladding layer between said InP coupling layer and said GaAs substrate layer;
- (f) an AlGaAs core layer between said AlGaAs cladding layer and said GaAs substrate layer;
- and
- (g) an AlGaAs isolation layer between said AlGaAs core layer and said GaAs substrate layer;
- (h) said InP coupling layer fusion bonded to a said one of said cladding layers.
A method for coupling electro-optic waveguides, comprising the steps of coupling a first waveguide structure on a first substrate to a second waveguide structure on a second substrate through a vertical fused gap layer.
A method for coupling electro-optic waveguides, comprising the steps of coupling a first single-mode ridge-loaded waveguide structure on a substrate to a second single-mode ridge loaded waveguide structure on a second substrate through a vertical fused gap layer.
Dependencies are inferred from the claim text.