Thin film forming method and thin film forming apparatus
AssigneeNissan Electric Co., Ltd.
InventorsHiroya Kirimura, Naoto Kuratani, Kiyoshi Ogata
Life of this patent
Estimating the term…
Loading patent…
AssigneeNissan Electric Co., Ltd.
InventorsHiroya Kirimura, Naoto Kuratani, Kiyoshi Ogata
Estimating the term…
In a thin film forming method and an apparatus A for implementing the method, a deposition chamber 1 provided with a substrate holder 12 and a radical emitting device 2 continuing to the chamber 1 for emitting neutral radicals uniformly to a whole deposition target region of a deposition target substrate S held by the holder 12 are used. Deposition gas plasma PL1 is formed at the vicinity of the substrate S on the holder 12 by supplying a predetermined deposition gas into the chamber 1. Neutral radicals RA are produced by exciting and dissociating a predetermined radical material gas in the radical emitting device 2, and the radicals are uniformly emitted to the deposition target region of the substrate S for forming a predetermined thin film on the substrate S.
A thin film forming method for forming a predetermined thin film on a deposition target substrate, comprising the steps of:
A thin film forming apparatus comprising:
Dependencies are inferred from the claim text.