Hybrid dual spin valve sensor and method for making same

A read/write head for accessing and storing data on a medium, comprising:

• an inductive write element;
• a hybrid dual spin valve magnetoresistive read sensor, including:
• a first antiferromagnetic layer formed of an antiferromagnetic material with a first Tb;
• a first soft ferromagnetic layer adjacent to said first antiferromagnetic layer;
• a first spacer layer formed of a conductive material and positioned adjacent to said first soft ferromagnetic layer;
• a free layer formed of a soft ferromagnetic material and positioned adjacent to said first spacer layer;
• a second spacer layer formed of a conductive material and positioned adjacent to said free layer;
• a second soft ferromagnetic layer formed of antiferromagnetic material with a second Tb, adjacent to said second spacer layer;
• a third spacer layer formed of a conductive material and positioned adjacent to said second soft ferromagnetic layer;
• a third soft ferromagnetic layer adjacent to said third spacer layer;
• a second antiferromagnetic layer;
• and
• a lead set formed of conductive material, electrically connected to said first spacer layer and configured to pass a first biasing current through said first spacer layer for pinning said first soft ferromagnetic layer.

A magnetic data storage and retrieval system, comprising:

• a suspension system to which a read/write head is connected, said read/write head thereby being capable of being supported over a magnetic medium, said read/write head including an inductive write element and a hybrid dual spin valve magnetoresistive read sensor having:
• a hybrid dual spin valve including,
• a first antiferromagnetic layer formed of an antiferromagnetic material with a first Tb, having a magnetization orientation in a first direction,
• a first soft ferromagnetic layer positioned adjacent to said first antiferromagnetic layer and having a magnetization orientation pinned substantially parallel to said first direction by said first antiferromagnetic layer,
• a first spacer layer formed of a conductive material and positioned adjacent to said first soft ferromagnetic layer,
• a free layer formed of a soft ferromagnetic material and positioned adjacent to said first spacer layer,
• a second spacer layer formed of a conductive material and positioned adjacent to said free layer,
• a second soft ferromagnetic layer having a second magnetization orientation and positioned adjacent to said second spacer layer,
• a third spacer layer formed of a conductive material and positioned adjacent to said second soft ferromagnetic layer,
• a third soft ferromagnetic layer having a third magnetization orientation and positioned adjacent to said third spacer layer, and
• a second antiferromagnetic layer formed of antiferromagnetic material with a second Tb, having a fourth magnetization orientation in a direction that is substantially antiparallel to said first direction, said second antiferromagnetic layer pinning said third magnetization orientation of said third soft ferromagnetic layer in a direction substantially antiparallel said first direction, said third soft ferromagnetic layer and said second soft ferromagnetic layer being exchange-coupled such that said second magnetization orientation of said second soft ferromagnetic layer is maintained in a direction substantially parallel said first direction;
• a lead set formed of a conductive material and electrically connected to said hybrid dual spin valve;
• a current source electrically connected to said lead set;
• and
• a signal detection circuit electrically connected to said lead set and configured to detect changes in electrical resistance within said hybrid dual spin valve.

A method for forming a hybrid dual spin valve magnetoresistive read sensor, comprising:

• providing a hybrid dual spin valve including,
• a first antiferromagnetic layer having a first blocking temperature,
• a first soft ferromagnetic layer adjacent to said first antiferromagnetic layer,
• a first spacer layer formed of a conductive material and positioned adjacent to said first soft ferromagnetic layer,
• a free layer formed of a soft ferromagnetic material and positioned adjacent to said first spacer layer,
• a second spacer layer formed of a conductive material and positioned adjacent to said free layer,
• a second soft ferromagnetic layer adjacent to said second spacer layer,
• a third spacer layer formed of a conductive material and positioned adjacent to said second soft ferromagnetic layer,
• a third soft ferromagnetic layer adjacent to said third spacer layer, and
• a second antiferromagnetic layer having a second blocking temperature lower than said first blocking temperature;
• fixing a magnetization orientation of said first antiferromagnetic layer;
• fixing a magnetization orientation of said second antiferromagnetic layer;
• attaching a lead set formed of a conductive material to said hybrid dual spin valve;
• attaching a current source to said lead set;
• and
• attaching a signal detection circuit to said lead set, said signal detection circuit configured to detect changes in electrical resistance within said hybrid dual spin valve.

A method for forming a hybrid dual spin valve magnetoresistive read sensor, comprising:

• providing a hybrid dual spin valve including,
• a first antiferromagnetic layer having a first blocking temperature,
• a first soft ferromagnetic layer adjacent to said first antiferromagnetic layer,
• a first spacer layer formed of a conductive material and positioned adjacent to said first soft ferromagnetic layer,
• a free layer formed of a soft ferromagnetic material and positioned adjacent to said first spacer layer,
• a second spacer layer formed of a conductive material and positioned adjacent to said free layer,
• a second soft ferromagnetic layer adjacent to said second spacer layer,
• a third spacer layer formed of a conductive material and positioned adjacent to said second soft ferromagnetic layer,
• a third soft ferromagnetic layer adjacent to said third spacer layer, and
• a second antiferromagnetic layer having a second blocking temperature higher than said first blocking temperature;
• fixing a magnetization orientation of said second antiferromagnetic layer;
• fixing a magnetization orientation of said first antiferromagnetic layer;
• attaching a lead set formed of a conductive material to said hybrid dual spin valve;
• attaching a current source to said lead set;
• and
• attaching a signal detection circuit to said lead set, said signal detection circuit configured to detect changes in electrical resistance within said hybrid dual spin valve.