Apparatus for improving film stability of halogen-doped silicon oxide films

A chemical vapor deposition system comprising:

• a housing configured to form a processing chamber;
• a substrate holder configured to hold a substrate within said processing chamber;
• a gas distribution system configured to introduce gases into said processing chamber;
• a plasma generation system configured to form a plasma within said processing chamber;
• a processor operatively coupled to control said gas distribution system and said plasma generation system;
• and
• a computer-readable memory coupled to said processor and storing a computer-readable program that directs the operation of said chemical vapor deposition system, said computer-readable program comprising:
• instructions that control said gas distribution system to flow a process gas comprising silicon, oxygen and a halogen family member into said chamber to deposit a halogen-doped silicon oxide film on said substrate;
• and
• instructions to control said gas distribution system and plasma generation system to form a plasma from a hydrogen containing source gas to bombard said halogen-doped silicon oxide film with hydrogen ions to remove loosely bound halogen atoms from said halogen-doped silicon oxide film.

A chemical vapor deposition system comprising:

• a housing configured to form a processing chamber;
• a substrate holder configured to hold a substrate within said processing chamber;
• a gas distribution system configured to introduce gases into said processing chamber;
• a plasma generation system configured to form a plasma within said processing chamber;
• a processor operatively coupled to control said gas distribution system and said plasma generation system;
• and
• a computer-readable memory coupled to said processor and storing a computer-readable program that directs the operation of said chemical vapor deposition system, said computer-readable program comprising:
• instructions that control said gas distribution system to flow a process gas comprising silicon, oxygen and fluorine into said chamber to deposit a fluorine-doped silicon oxide film on said substrate;
• and
• instructions to control said gas distribution system and plasma generation system to form a hydrogen plasma and bombard said fluorine-doped silicon oxide film with said hydrogen plasma for between about 10-500 seconds.

A chemical vapor deposition system comprising:

• a housing configured to form a processing chamber;
• a substrate holder configured to hold a substrate within said processing chamber;
• a gas distribution system configured to introduce gases into said processing chamber;
• a plasma generator system configured to form a plasma within said processing chamber;
• a heater configured to heat said substrate;
• a pressurization system configured to set and maintain pressure within said chamber;
• a processor operatively coupled to control said gas distribution system, said plasma generation system, said heater and said pressurization system;
• and
• a computer-readable memory coupled to said processor and storing a computer-readable program that directs the operation of said chemical vapor deposition system, said computer-readable program comprising a first set of instructions which include:
• instructions that control said heater to heat said substrate to a temperature of between about 350-500° C.;
• instructions that control said pressurization system to pressurize said chamber at a pressure of between about 3-16 torr;
• instructions that control said gas distribution system to flow a process gas comprising TEOS, oxygen and fluorine into said chamber;
• instructions that control said gas distribution system and said plasma generation system to form a plasma from said TEOS, said oxygen containing source gas and said fluorine containing source gas, wherein said plasma generation system includes a mixed frequency RF power supply to deposit a fluorosilicate glass (FSG) film on said substrate;
• and a subsequent set of instructions which include:
• instructions that control said heater to heat said substrate to a temperature of between about 400-480° C.;
• instructions that control said pressurization system to pressurize said chamber at a pressure of between about 50-100 torr;
• instructions that control said gas distribution system to flow a process gas comprising hydrogen into said chamber;
• and
• instructions that control said gas distribution system and said plasma generation system to form a plasma from said hydrogen containing source gas, wherein said plasma generation system includes a mixed frequency RF power supply configured to remove loosely bound fluorine atoms from an upper surface of said FSG film.

A chemical vapor deposition system comprising:

• a housing configured to form a process chamber;
• a substrate holder configured to hold a substrate within said processing chamber;
• a gas distribution system configured to introduce gases into said processing chamber;
• a plasma generation system configured to form a plasma within said processing chamber;
• a processor operatively coupled to control said gas distribution system and said plasma generation system;
• and
• a computer-readable memory coupled to said processor and storing a computer-readable program that directs the operation of said chemical vapor deposition system, said computer-readable program comprising:
• instructions that control said gas distribution system to flow a process gas comprising silicon, oxygen and fluorine into said chamber to deposit a fluorine-doped silicon oxide film on said substrate;
• and
• instructions to control said gas distribution system to flow a process gas comprising silicon, oxygen and a halogen element into said chamber to deposit a halogen-doped silicon oxide film on said substrate;
• and
• instructions to control said gas distribution system and said plasma generation system to form a plasma from a hydrogen containing source gas or and inert gas containing source gas, and bombard said halogen-doped silicon film with ionic species to improve the stability of said halogen-doped silicon oxide film.

A chemical vapor deposition system comprising:

• a housing configured to form a processing chamber;
• a substrate holder configured to hold a substrate within said processing chamber;
• a gas distribution system configured to introduce gases into said processing chamber;
• a plasma generation system configured to form a plasma within said processing chamber;
• a processor operatively coupled to control said gas distribution system and said plasma generation system;
• and
• a computer-readable memory coupled to said processor and storing a computer-readable program that directs the operation of said chemical vapor deposition system, said computer-readable program comprising:
• instructions that control said gas distribution system to flow a process gas comprising silicon, oxygen and fluorine into said chamber to deposit a fluorine-doped silicon oxide film on said substrate;
• and
• subsequent instructions to control said gas distribution system and plasma generation system to form a hydrogen and nitrogen plasma and bombard said fluorine-doped silicon oxide film with said hydrogen and nitrogen plasma for between about 10-500 seconds.