Compliant substrates for growing lattice mismatched films

A semiconductor structure, comprising:

• a compliant substrate, including:
• a first single crystal layer;
• an oxidized amorphous buffer layer on the first single crystal layer;
• and
• a second single crystal layer on the amorphous buffer layer, the second single crystal layer is compliant and has a thickness no greater than about fifteen times a critical thickness of the second single crystal layer;
• and
• a device selected from the group consisting of electronic devices and optoelectronic devices on the second single crystal layer, the device including at least one lattice mismatched layer formed on the second single crystal layer.

A process, comprising:

• forming an intermediate single crystal layer on a first single crystal layer;
• forming a second single crystal layer on the intermediate single crystal layer, the second single crystal layer having a thickness no greater than about fifteen times the critical thickness of the second single crystal layer;
• and
• treating the intermediate single crystal layer to form an oxidized amorphous buffer layer which is weakly bonded to the amorphous buffer layer.

A semiconductor structure, comprising:

• a first single crystal layer;
• an amorphous buffer layer on the first single crystal layer;
• a second single crystal layer on the amorphous buffer layer, the second single crystal layer is compliant and has a thickness no greater than about fifteen times a critical thickness of the second single crystal layer;
• and
• at least one GaN layer formed on the second single crystal layer.

A compliant substrate, comprising:

• a first single crystal layer;
• an amorphous buffer layer on the first single crystal layer;
• and
• a second single crystal layer on the amorphous buffer layer, the second single crystal layer is compliant and has a thickness no greater than about fifteen times a critical thickness of the second single crystal layer,
• wherein the amorphous buffer layer is formed by:
• forming an intermediate single crystal layer on the first single crystal layer;
• forming the second single crystal layer on the intermediate single crystal layer;
• and
• treating the intermediate single crystal layer to form the amorphous buffer layer which is weakly bonded to the second single crystal layer.