Emitter of infrared radiation in band III and composite allowing the emission of such radiation
AssigneeAerospatiale Matra Missiles
InventorsPatrice Seguy, Valérie Alonso
Life of this patent
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Abstract
The invention relates to an emitter of infrared radiation in band III as well as to a composite allowing the emission of such infrared radiation. The emitter includes an emission source having a composite on which a thin oxide layer is deposited. The oxide has an emissivity which is less than 0.2 for wavelengths of emitted radiation of less than 6 μm and greater than 0.8 for wavelengths of between 8 and 10 μm. The invention also includes a heating device which can heat the composite so that it emits infrared radiation in band III.
Claims8
An emitter of infrared radiation in band III, said emitter comprising:
- an emission source including a composite which includes a metal on which a thin oxide layer is deposited, said oxide having an emissivity which is:
- less than 0.2, at least for wavelengths of emitted radiation (R) of less than 6 μm;
- and
- greater than 0.8 for wavelengths of between 8 μm and 10 μm;
- and
- a heating device for heating said composite so that it emits infrared radiation in band III, wherein said metal is hemispherical in shape and wherein said oxide is deposited on the hemispherical external face of said metal.
A composite for the emission of infrared radiation in band III, said composite comprising:
- a metal and an oxide, wherein said oxide is deposited in the form of a thin layer on said metal and wherein said oxide has an emissivity which is:
- less than 0.2, at least for wavelengths of emitted radiation less than 6 μm;
- and
- greater than 0.8 for wavelengths of emitted radiation between 8 μm and 10 μm, wherein said metal is hemispherical in shape and wherein said oxide is deposited on the hemispherical external face of said metal.
Dependencies are inferred from the claim text.