Method and system for providing a continuous motion sequential lateral solidification

A method for processing a silicon thin film sample to produce a crystalline silicon thin film, the film sample having a first edge and a second edge, the method comprising the steps of:

• (a) controlling a laser beam generator to emit a laser beam;
• (b) masking portions of the laser beam to generate patterned beamlets, each of the patterned beamlets impinging on the film sample and having an intensity which is sufficient to melt the film sample;
• and
• (c) continuously scanning, at a constant predetermined speed, the film sample so that impingement of the patterned beamiets moves along a predetermined path on the film sample between the first edge and the second edge with the patterned beamlets, wherein the continuous step is performed without stopping when the film sample is impinged by the patterned beamlets along the predetermined path,
• wherein at least one of the patterned beamlets has a predetermined width and a predetermined length, the predetermined length being greater than the predetermined width and extending along at least one of the first path and the second path.

A method for processing a silicon thin film sample to produce a crystalline silicon thin film, the film sample having a first edge and a second edge, the method comprising the steps of:

• (a) controlling a laser beam generator to emit a laser beam;
• (b) masking portions of the laser beam to generate patterned beamlets, each of the patterned beamlets impinging on the film sample and having an intensity which is sufficient to melt the film sample;
• (c) continuously scanning, at a first constant predetermined speed, the film sample so that impingement of the patterned beamlets moves along a first path on the film sample between the first edge and the second edge with the patterned beamlets;
• and
• (d) continuously scanning, at a second constant predetermined speed, the film sample so that impingement of the patterned beamlets moves along a second path on the film sample between the first edge and the second edge with the patterned beamlets,
• wherein at least one of the first path and the second path extends in a direction which is approximately perpendicular to the direction of grain growth that occurs upon a re-solidification of particular previously-melted portions of the film sample.

A method for processing a silicon thin film sample to produce a crystalline silicon thin film, the film sample having a first edge and a second edge, the method comprising the steps of:

• (a) controlling a laser beam generator to emit a pulsed laser beam;
• (b) masking portions of the pulsed laser beam to generate patterned beamlets, each of the patterned beamlets impinging on the film sample and having an intensity which is sufficient to melt the film sample;
• (c) continuously scanning, without microtranslating and at a first constant predetermined speed, the film sample so that impingement of the patterned beamlets moves along a first path on the film sample between the first edge and the second edge with the patterned beamlets;
• and
• (d) continuously scanning, without microtranslating and at a second constant predetermined speed, the film sample so that impingement of the patterned beamlets moves along a second path on the film sample between the first edge and the second edge with the patterned beamlets.

A method for processing a silicon thin film sample to produce a crystalline silicon thin film, the film sample having a first edge and a second edge, the method comprising the steps of:

• (a) controlling a laser beam generator to emit a laser beam;
• (b) masking portions of the laser beam to generate patterned beamlets, each of the patterned beamlets impinging on the film sample and having an intensity which is sufficient to melt the film sample;
• and
• (c) continuously scanning, without microtranslating and at a constant predetermined speed, the film sample so that impingement of the patterned beamlets moves along a predetermined path on the film sample between the first edge and the second edge with the patterned beamlets, wherein the continuous step is performed without stopping when the film sample is impinged by the patterned beamlets along the predetermined path.

A method for processing a silicon thin film sample to produce a crystalline silicon thin film, the film sample having at least one region which includes a first boundary and a second boundary, the method comprising the steps of:

• (a) controlling a laser beam generator to emit a pulsed laser beam;
• (b) masking portions of the pulsed laser beam to generate patterned beamlets, each of the patterned beamlets impinging on the at least one region and having an intensity which is sufficient to melt the at least one region;
• (c) continuously scanning, without microtranslating and at a first constant predetermined speed, the at least one region so that impingement of the patterned beamlets moves along a first path on the at least one region between the first boundary and the second boundary with the patterned beamlets;
• and
• (d) continuously scanning, without microtranslating and at a second constant predetermined speed, the at least one region so that impingement of the patterned beamlets moves along a second path on the at least one region between the first boundary and the second boundary with the patterned beamlets.

A method for processing a silicon thin film sample to produce a crystalline silicon thin film, the film sample having at least one region which includes a first boundary and a second boundary, the method comprising the steps of:

• (a) controlling a laser beam generator to emit a pulsed laser beam;
• (b) masking portions of the pulsed laser beam to generate patterned beamlets, each of the patterned beamlets impinging on the at least one region and having an intensity which is sufficient to melt the at least one region;
• and
• (c) continuously scanning, without microtranslating and at a constant predetermined speed, the at least one region so that impingement of the patterned beamlets moves along a predetermined path on the at least one region between the first boundary and the second boundary with the patterned beamlets, wherein the continuous step is performed without stopping when the at least one boundary is impinged by the patterned beamlets along the predetermined path.