Method and apparatus for storage of test results within an integrated circuit

A method of testing an integrated circuit, comprising:

• performing a first test of the integrated circuit;
• programming a plurality of nonvolatile storage elements within the integrated circuit in accordance with a result of said step of performing a test, the plurality of nonvolatile storage elements being programmed by selectively altering the conductive state of the nonvolatile storage elements,
• reading the result from the plurality of nonvolatile storage elements;
• and
• performing a second test of the integrated circuit only when the result indicates successful completion of the first test.

A method of processing/handling an integrated circuit, comprising:

• programming a nonvolatile storage element within the integrated circuit in accordance with a predetermined designation, the nonvolatile storage element being programmed by selectively altering the conductive state of the nonvolatile storage element;
• reading a value from the nonvolatile storage element;
• and
• selectively affecting a process/manufacturing/handling flow of the integrated circuit in accordance with the value read from the nonvolatile storage element.

A method, comprising:

• reading a value stored in a nonvolatile memory cell of an integrated circuit, the value stored in the nonvolatile memory cell being determined by selectively altering the conductive state of the nonvolatile memory cell;
• selecting a process step for continuing the manufacture of the integrated circuit, the selecting based on the stored value;
• and
• performing the process step with respect to the integrated circuit.

A method for forming a semiconductor structure, comprising:

• forming a conductive layer on a substrate using a mask;
• forming in the conductive layer one or more read-only storage elements each having a predetermined digital state, the predetermined digital states being determined by selectively altering the conductive state of the storage elements together identifying the mask;
• reading the storage elements;
• and
• controlling a portion of a process used to manufacture the semiconductor structure in response to the predetermined digital states, the portion being before or concurrent with the forming the conductive layer.

A method for forming an integrated device, comprising:

• forming on a substrate a plurality of conductive layers;
• forming in each conductive layer one or more read-only storage elements that together permanently store a desired data value pertaining to the conductive layer, the value stored in the one or more read-only storage elements being determined by selectively altering the conductive state of the one or more read-only storage elements;
• reading the data value;
• and
• controlling a process used during the manufacture of the integrated device in response to the data value.