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US 6,362,087 B1Granted
Method for fabricating a microelectronic fabrication having formed therein a redistribution structure
AssigneeAptos Corporation
InventorsTsing-Chow Wang, Te-Sung Wu, Erh-Kong Chieh
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Abstract
Within a method for fabricating a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a patterned bond pad layer. There is also formed over the substrate and in electrical communication with the patterned bond pad layer a patterned redistribution layer, wherein the patterned redistribution layer is formed employing a plating method. The method is particularly economical for fabricating the microelectronic fabrication.
Claims15
A method for fabricating a microelectronic fabrication comprising:
- providing a substrate;
- forming over the substrate a patterned bond pad layer;
- forming over the substrate and in electrical communication with the patterned bond pad layer a first barrier layer;
- and forming over the first barrier layer on top of the patterned bond pad layer a patterned redistribution layer;
- forming over the patterned redistribution layer a second barrier layer;
- forming over the second barrier layer and in electrical communication with the patterned redistribution layer a patterned terminal electrode layer, wherein at least one of the first barrier layer and the second barrier layer is formed of tri-layer stack comprising:
- a first titanium-tungsten alloy layer;
- a titanium-tungsten alloy nitride layer formed upon the first titanium-tungsten alloy layer;
- and
- a second titanium-tungsten alloy layer formed upon the titanium-tungsten alloy nitride layer.
7 more elements
A microelectronic fabrication comprising:
- a substrate;
- a patterned bond pad layer formed over the substrate;
- a patterned redistribution layer formed over the substrate and in electrical communication with the patterned bond pad layer;
- a patterned terminal electrode layer formed over the substrate and in electrical communication with the patterned redistribution layer;
- at least one of:
- a first barrier layer interposed between the patterned bond pad layer and the patterned redistribution layer;
- a second barrier layer interposed between the patterned terminal electrode layer and the patterned redistribution layer;
- wherein the at least one of the first barrier layer and the second barrier layer is formed of a tri-layer stack comprising:
- a first titanium-tungsten alloy layer;
- a titanium-tungsten alloy nitride layer formed upon the first titanium-tungsten alloy layer;
- and
- a second titanium-tungsten alloy layer formed upon the titanium-tungsten alloy nitride layer.
9 more elements
Dependencies are inferred from the claim text.