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US 6,356,573 B1Granted
Vertical cavity surface emitting laser
AssigneeMitel Semiconductor Limited
InventorsJan Jonsson, Vilhelm Oscarsson
Life of this patent
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Abstract
A top surface emitting vertical cavity laser with enhanced power handling capacity. The laser provides a patterned top electrode for uniformly injecting applied current to the active area. The diameter of the electrode relative to the vertical distance between it and the active layer is reduced by patterning. The result is an improved laser with significant power output.
Claims11
A laser comprising:
- a substrate;
- a first layer of mirrors;
- an active layer;
- a passivated region;
- a second layer of mirrors;
- a bonding pad;
- and
- a patterned electrode connected to said pad and in electrical contact with said second layer of mirrors for improving power handling, optical mode control, and polarization, said electrode comprising a non-annular electrode for concentrating applied current uniformly to said active layer and including projections parallel with said active layer, said projections including further projections.
5 more elements
A method of enhancing the output power of a laser, comprising:
- providing a top emitting semiconductor laser having Bragg mirrors, an active region, a passivated region, substrate and bond pad;
- forming a patterned non-annular electrode adjacent said active region whereby applied current is concentrated in said active region for increased output power of said semiconductor;
- and
- providing said electrode with at least one projection for directing applied current to said active layer, said at least one projection arranged in a parallel relationship with said active layer.
1 more element
Dependencies are inferred from the claim text.