High breakdown voltage semiconductor device having trenched film connected to electrodes

A high breakdown voltage semiconductor device formed on a high resistance semiconductor layer of a first conductivity type, comprising:

• a drift region of a second conductivity type selectively formed on a surface of the high resistance semiconductor layer;
• a plurality of trenches formed like a stripe in the drift region in substantially parallel with a current flowing direction;
• an insulation film formed on a side and a bottom of each of the trenches;
• and
• a high resistance film buried into each of the trenches with the insulation film interposed therebetween,
• wherein the high resistance film is connected to one of source and gate electrodes directly or through a resistor near a source-end portion of each of the trenches, and the high resistance film is connected to a drain electrode directly or through a resistor near a drain-end portion thereof.

A high breakdown voltage semiconductor device including a first high breakdown voltage MOSFET, a second high breakdown voltage MOSFET, a resistor, comprising:

• a plurality of trenches formed like a stripe in a drift region of the first high breakdown voltage MOSFET, in substantially parallel with a current flowing direction;
• an insulation film formed on a side and a bottom of each of the trenches;
• and
• a high resistance film buried into each of the trenches with the insulation film interposed therebetween,
• wherein the first high breakdown voltage MOSFET and the second high breakdown voltage MOSFET have a common source electrode and a common gate electrode, and one end of the high resistance film is connected to the common gate electrode, while another end thereof is connected to a drain electrode of the second high breakdown voltage MOSFET and one end of the resistor.

A high breakdown voltage semiconductor device formed on a high resistance semiconductor layer, comprising:

• a plurality of trenches formed like a stripe in a drift region in substantially parallel with a current flowing direction;
• an insulation film formed on a side of each of the trenches;
• and
• a high resistance film buried into each of the trenches,
• wherein the high resistance film is connected to one of source and gate electrodes directly or through a resistor near a source-end portion of each of the trenches, and the high resistance film is connected to a drain region near a drain-end portion of each of the trenches.