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US 6,350,653 B1Granted
Embedded DRAM on silicon-on-insulator substrate
AssigneeInternational Business Machines Corporation
InventorsJames W. Adkisson, Ramachandra Divakaruni, Jeffrey P. Gambino, Jack A. Mandelman
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Abstract
A semiconductor device is presented which is directed to a method of forming embedded DRAM and logic devices, where the DRAM devices are formed in bulk, single crystalline semiconductor regions and logic devices are formed in silicon-on-insulator (“SOI”) regions and where buried, doped glass is used as a mask to form deep trenches for storage in the bulk region. The resulting structure is also disclosed.
Claims9
A method for forming a semiconductor apparatus, comprising the steps of:
- (a) providing a single crystalline substrate having a substantially planar surface;
- (b) forming a silicon-on-insulator region on a first surface area of said planar surface;
- (c) forming a single crystalline bulk region on a second surface area of said planar surface;
- (d) forming embedded logic devices in said silicon-on-insulator region;
- (e) forming embedded memory devices in said single crystalline bulk region;
- and
- (f) forming doped polysilicon-filled trenches in the single crystalline bulk region.
4 more elements
Dependencies are inferred from the claim text.