NROM cell with self-aligned programming and erasure areas
AssigneeSaifun Semiconductors Ltd.
InventorBoaz Eitan
Life of this patent
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Abstract
A nitride programmable read only memory (NROM) cell has an oxide-nitride-oxide layer over at least a channel and a pocket implant self-aligned to at least one bit line junction. The cell also includes at least one area of hot electron injection within the ONO layer and over the pocket implant and at least one area of hot hole injection generally self-aligned to the area of hot electron injection.
Claims4
A nitride programmable read only memory (NROM) cell comprising:
- a channel;
- two diffusion areas on either side of said channel, each diffusion area having a junction with said channel;
- an oxide-nitride-oxide (ONO) layer at least over said channel;
- a polysilicon gate at least above said ONO layer;
- a pocket implant self-aligned to at least one of said junctions;
- at least one area of hot electron injection within said ONO layer and over said pocket implant;
- and
- at least one area of hot hole injection generally self-aligned to said at least one area of hot electron injection.
A method of erasing an NROM cell having a channel, two diffusion areas on either side of said channel, each diffusion area having a junction with said channel, an oxide-nitride-oxide (ONO) layer at least over said channel, a pocket implant self-aligned to at least one of said junctions and at least one area of hot electron injection within said ONO layer and over said pocket implant, the method comprising the steps of:
- generating holes at the intersection of one of said junctions, its neighboring pocket implant and a portion of said ONO layer near said junction;
- accelerating said holes along the surface of said channel;
- and
- injecting said holes close to the area of electron injection.
Dependencies are inferred from the claim text.