Method for making a hafnium-based insulating film
AssigneeMotorola, Inc.
InventorDavid Christopher Gilmer
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Abstract
A hafnium-based dielectric layer, such as hafnium oxide (HfO2), is formed over a semiconductor substrate by flowing a hafnium-containing precursor of hafnium (Hf) and iodine (I) and an oxygen-containing precursor resulting in a high quality dielectric layer over the substrate. In one embodiment, the hafnium-containing precursor is Hafnium tetraiodide (HfI4). The two precursors may be applied simultaneously or alternately. The hafnium tetraiodide may be provided into a reaction chamber via sublimation or direct liquid injection.
Claims25
A method of forming a semiconductor device, comprising:
- placing a semiconductor substrate in a reaction chamber;
- and
- forming a dielectric layer over the semiconductor substrate comprising flowing a first precursor comprising Hf and I over the substrate.
A method of forming a semiconductor device, comprising:
- placing a semiconductor substrate into a reaction chamber;
- and
- forming a dielectric layer over the semiconductor substrate comprising
- flowing a first precursor comprising hafnium tetraiodide and a second precursor comprising oxygen.
A method of forming a hafnium-containing layer over a semiconductor substrate, comprising:
- inserting the semiconductor substrate in a reaction chamber;
- providing a solid material comprising hafnium and iodine;
- causing sublimation of a surface of the solid material to provide a gas containing hafnium and iodine;
- transporting the gas containing hafnium and iodine to the reaction chamber;
- and
- inserting the gas containing hafnium and iodine into the reaction chamber to form a hafnium-containing layer.
Dependencies are inferred from the claim text.