Secondary electron amplification structure employing carbon nanotube, and plasma display panel and back light using the same

A plasma display panel comprising:

• front and rear substrates disposed to face each other with a predetermined gap therebetween;
• electrodes formed between the facing front and rear substrates, the electrodes crossing one another;
• partition walls formed between electrodes on the rear substrate, the partition walls maintaining the predetermined gap between the front and rear substrates, the partition walls forming discharge cells;
• luminance materials deposited on the sides of the partition walls and on the electrodes on the rear substrate;
• and
• a secondary electron amplification structure, said secondary electron amplification structure comprising:
• a carbon nanotube layer formed on the electrodes on the front substrate;
• and
• a second layer formed of one material selected from the group consisting of MgO, MgF2, CaF2, LiF, Al2O3, ZnO, CaO, SrO, SiO2 and La2O3 stacked on the carbon nanotube layer.

A surface discharge type triode plasma display panel comprising:

• front and rear substrates disposed to face each other with a predetermined gap therebetween;
• address electrodes formed on the rear substrate in a striped pattern;
• partition walls formed between the address electrodes on the rear substrate parallel to the address electrodes, the partition walls maintaining the predetermined gap between the front and rear substrates, the partition walls forming discharge cells;
• luminance material deposited on the sides of the partition walls and on the address electrodes;
• scanning electrodes and common electrodes formed parallel to each other in a striped pattern on the front substrate with a predetermined gap therebetween, the scanning and common electrodes crossing the address electrodes;
• a dielectric layer deposited on the front substrate such that the scanning and common electrodes are covered with the dielectric layer;
• and
• a secondary electron amplification structure, said secondary electron amplification structure comprising:
• a carbon nanotube layer formed on the dielectric layer;
• and
• a second layer formed of one material selected from the group consisting of MgO, MgF2, CaF2, LiF, Al2O3, ZnO, CaO, SrO, SiO2 and La2O3 stacked on the carbon nanotube layer.

A back light comprising:

• front and rear substrates disposed to face each other with a predetermined gap therebetween to form a discharge space;
• a first electrode formed on the surface of the front substrate in the discharge space;
• a luminescent material layer formed on the first electrode;
• a second electrode and a third electrode formed parallel to each other on the rear substrate in the discharge space with a predetermined gap therebetween, the second and third electrodes sustaining discharge;
• a dielectric layer deposited on the rear substrate such that the second and third electrodes are covered with the dielectric layer;
• partition walls for maintaining the predetermined gap between the front and rear substrates to be sustained and sealing the discharge space;
• and
• a secondary electron amplification structure, said secondary electron amplification structure comprising:
• a carbon nanotube layer formed on the dielectric layer;
• and
• a second layer formed of one material selected from the group consisting of MgO, MgF2, CaF2, LiF, Al2O3, ZnO, CaO, SrO, SiO2 and La2O3 stacked on the carbon nanotube layer.