Semiconductor memory device and method for repairing thereof

Abstract

A semiconductor memory device which includes a plurality of memory cell array blocks, each block including 2n partial blocks selectable in response to n address bits among a plurality of bits address. A partial block select signal generator is used for selecting ½n partial blocks of the 2n partial blocks in each of the plurality of memory cell array blocks by selecting the state of corresponding address bits among the n address bits. A method for repairing a semiconductor memory device which includes a plurality of memory cell array blocks and 2n partial blocks selected by the plurality of memory cell array blocks each responding to n address bits among a plurality of address bits, the method includes selecting only the ½n functional partial blocks of the 2n partial blocks in each of the plurality of memory cell array blocks by selecting the state of corresponding address bits among the n bits of address information.

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