Method for manufacturing a TFT-LCD using CF and H etching gas for etching organic insulator

Abstract

A method of manufacturing an LCD in which a pixel electrode is formed on a photosensitive passivation layer uses an etching gas including at least one of CF4+H2, CxFy+H2, CxFy+CxFyHz, CxFy+CxFyHz+H2 and CxFyHz. As a result, a surface of the patterned passivation layer is easily and reliably made to be even. Furthermore, the gate insulating layer is simultaneously patterned to form a gate contact hole without experiencing any over-etching and/or undercut portions.

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