US 6,337,516 B1 · Technique for extending the limits of photolithography

Abstract

A method of forming a wiring pattern in a device comprises forming an array of grooves in a mask, forming first spacers adjacent vertical walls of the grooves, removing the mask, forming second spacers adjacent the first spacers, and filling areas between the first spacers and areas between the second spacers with a material to form the wiring pattern.

Claims0

Dependent claims

Claims aren’t available for this document.

Facts

Application

09/609,380Filed 3 Jul 2000

Granted

8 Jan 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10W 20/089
By forming openings in the dielectric parts: using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
H10W 20/056
Of conductive parts of the interconnections: by filling conductive material into holes, grooves or trenches
H10W 20/063
Of conductive parts of the interconnections: by forming conductive members before forming protective insulating material
H10W 20/0636
By forming conductive members before forming protective insulating material: the conductive members being on sidewalls

Technique for extending the limits of photolithography

Life of this patent

Abstract

Claims0

Technique for extending the limits of photolithography

Life of this patent

Abstract

Claims0