Method and apparatus for selectable wordline boosting in a memory device

Abstract

A method and apparatus for selectable word line boosting in a memory device provides operating of the memory device over wide power supply ranges. A voltage reference and a comparator determine whether or not the power supply voltage has dropped below the range in which word line boosting is not required. If the power supply voltage has dropped, word line boosting is enabled, improving the noise margin and access time of the memory when operating at lower voltages.

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