Driving circuit of nonvolatile ferroelectric memory device and method for driving the same

Abstract

A driving circuit of a nonvolatile ferroelectric memory device and a method for driving the same are disclosed, in which the driving circuit is suitable for preventing the cell data destroy due to the abnormal changes of a voltage. A driving circuit of a nonvolatile ferroelectric memory device that uses residual polarization characteristic of ferroelectric includes: a detecting unit for detecting voltage changes of a system; a system voltage sensing signal generator for generating a low voltage sensing output or a normal voltage sensing output as a system voltage changes from a normal voltage to a lower voltage or from a lower voltage to a normal voltage; and a signal synchronization and chip control part for controlling an operation stopping or starting point of a memory cell by synchronizing output of the system voltage sensing signal generator with a chip activation signal.

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